[3937pcs Hisa]
- Nambari ya Sehemu:
- IRF8852TRPBF
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET 2N-CH 25V 7.8A 8TSSOP.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Transistors - FET, MOSFETs - RF, Viwango - RF, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Transistors - Bipolar (BJT) - Kufika ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IRF8852TRPBF electronic components. IRF8852TRPBF can be shipped within 24 hours after order. If you have any demands for IRF8852TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF8852TRPBF Sifa za Bidhaa
Nambari ya Sehemu :
IRF8852TRPBF
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET 2N-CH 25V 7.8A 8TSSOP
Mfululizo :
HEXFET®
Hali ya Sehemu :
Obsolete
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
25V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
7.8A
Njia ya Kutumia (Max) @ Id, Vgs :
11.3 mOhm @ 7.8A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 25µA
Malango ya Lango (Qg) (Max) @ Vgs :
9.5nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1151pF @ 20V
Nguvu - Max :
1W
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-TSSOP (0.173", 4.40mm Width)
Kifurushi cha Kifaa cha Mtoaji :
8-TSSOP
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