IGLD60R070D1AUMA1 Bei (USD) [5863pcs Hisa]
- 1 pcs$7.02907
- Nambari ya Sehemu:
- IGLD60R070D1AUMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- IC GAN FET 600V 60A 8SON.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - RF, Transistors - Kusudi Maalum, Thyristors - SCR, Viwango - Rectifiers - Moja and Viwango - Rectifiers - Arrays ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IGLD60R070D1AUMA1 electronic components. IGLD60R070D1AUMA1 can be shipped within 24 hours after order. If you have any demands for IGLD60R070D1AUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IGLD60R070D1AUMA1 Sifa za Bidhaa
Nambari ya Sehemu :
IGLD60R070D1AUMA1
Mzalishaji :
Infineon Technologies
Maelezo :
IC GAN FET 600V 60A 8SON
Mfululizo :
CoolGaN™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
GaNFET (Gallium Nitride)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
15A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
-
Njia ya Kutumia (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
1.6V @ 2.6mA
Malango ya Lango (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
380pF @ 400V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
114W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-LSON-8-1
Kifurushi / Kesi :
8-LDFN Exposed Pad
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