ON Semiconductor - NVF3055-100T1G

KEY Part #: K6399829

NVF3055-100T1G Bei (USD) [237641pcs Hisa]

  • 1 pcs$0.15565
  • 2,000 pcs$0.14774

Nambari ya Sehemu:
NVF3055-100T1G
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 60V 3A SOT223.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Transistors - IGBTs - Moja, Thyristors - DIAC, SIDAC, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Transistors - Kusudi Maalum, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Transistors - Bipolar (BJT) - Kufika ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVF3055-100T1G Sifa za Bidhaa

Nambari ya Sehemu : NVF3055-100T1G
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 60V 3A SOT223
Mfululizo : Automotive, AEC-Q101
Hali ya Sehemu : Not For New Designs
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 3A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 110 mOhm @ 1.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 22nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 455pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 1.3W (Ta)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : SOT-223
Kifurushi / Kesi : TO-261-4, TO-261AA

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