Infineon Technologies - BTS282ZE3180AATMA2

KEY Part #: K6399855

BTS282ZE3180AATMA2 Bei (USD) [31424pcs Hisa]

  • 1 pcs$1.31155
  • 1,000 pcs$1.00084

Nambari ya Sehemu:
BTS282ZE3180AATMA2
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 49V 80A TO-220-7.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Moja, Transistors - Ushirikiano uliopangwa, Transistors - IGBTs - Moja, Transistors - JFETs, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - RF and Thyristors - DIAC, SIDAC ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BTS282ZE3180AATMA2 Sifa za Bidhaa

Nambari ya Sehemu : BTS282ZE3180AATMA2
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 49V 80A TO-220-7
Mfululizo : TEMPFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 49V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 80A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 6.5 mOhm @ 36A, 10V
Vgs (th) (Max) @ Id : 2V @ 240µA
Malango ya Lango (Qg) (Max) @ Vgs : 232nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 4800pF @ 25V
Makala ya FET : Temperature Sensing Diode
Kuondoa Nguvu (Max) : 300W (Tc)
Joto la Kufanya kazi : -40°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-TO263-7-1
Kifurushi / Kesi : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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