IRF6665TRPBF Bei (USD) [207548pcs Hisa]
- 1 pcs$0.20120
- 4,800 pcs$0.20020
- Nambari ya Sehemu:
- IRF6665TRPBF
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 100V 4.2A DIRECTFET.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Viwango - Zener - Moja, Moduli za Dereva za Nguvu, Thyristors - SCRs - Moduli, Transistors - Kusudi Maalum, Transistors - IGBTs - Moduli, Transistors - IGBTs - Moja and Transistors - Bipolar (BJT) - RF ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IRF6665TRPBF electronic components. IRF6665TRPBF can be shipped within 24 hours after order. If you have any demands for IRF6665TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6665TRPBF Sifa za Bidhaa
Nambari ya Sehemu :
IRF6665TRPBF
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 100V 4.2A DIRECTFET
Mfululizo :
HEXFET®
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
4.2A (Ta), 19A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
62 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
13nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
530pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
2.2W (Ta), 42W (Tc)
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
DIRECTFET™ SH
Kifurushi / Kesi :
DirectFET™ Isometric SH
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