Diodes Incorporated - ZXMN3A04DN8TC

KEY Part #: K6524560

[3791pcs Hisa]


    Nambari ya Sehemu:
    ZXMN3A04DN8TC
    Mzalishaji:
    Diodes Incorporated
    Maelezo ya kina:
    MOSFET 2N-CH 30V 6.5A 8SOIC.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kufika, Viwango - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Viwango - RF and Thyristors - TRIAC ...
    Faida ya Ushindani:
    We specialize in Diodes Incorporated ZXMN3A04DN8TC electronic components. ZXMN3A04DN8TC can be shipped within 24 hours after order. If you have any demands for ZXMN3A04DN8TC, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    ZXMN3A04DN8TC Sifa za Bidhaa

    Nambari ya Sehemu : ZXMN3A04DN8TC
    Mzalishaji : Diodes Incorporated
    Maelezo : MOSFET 2N-CH 30V 6.5A 8SOIC
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya FET : 2 N-Channel (Dual)
    Makala ya FET : Logic Level Gate
    Kukata kwa Voltage Voltage (Vdss) : 30V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 6.5A
    Njia ya Kutumia (Max) @ Id, Vgs : 20 mOhm @ 12.6A, 10V
    Vgs (th) (Max) @ Id : 1V @ 250µA (Min)
    Malango ya Lango (Qg) (Max) @ Vgs : 36.8nC @ 10V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 1890pF @ 15V
    Nguvu - Max : 1.81W
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)
    Kifurushi cha Kifaa cha Mtoaji : 8-SOP