[1985pcs Hisa]
- Nambari ya Sehemu:
- BUK961R4-30E,118
- Mzalishaji:
- NXP USA Inc.
- Maelezo ya kina:
- MOSFET N-CH 30V 120A D2PAK.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - Moja, Transistors - IGBTs - Moduli, Viwango - Zener - Moja, Thyristors - SCR, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - RF and Thyristors - DIAC, SIDAC ...
- Faida ya Ushindani:
- We specialize in NXP USA Inc. BUK961R4-30E,118 electronic components. BUK961R4-30E,118 can be shipped within 24 hours after order. If you have any demands for BUK961R4-30E,118, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BUK961R4-30E,118 Sifa za Bidhaa
Nambari ya Sehemu :
BUK961R4-30E,118
Mzalishaji :
NXP USA Inc.
Maelezo :
MOSFET N-CH 30V 120A D2PAK
Mfululizo :
TrenchMOS™
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
120A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.4 mOhm @ 25A, 5V
Vgs (th) (Max) @ Id :
2.1V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
113nC @ 5V
Vgs (Max) :
±10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
16150pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
357W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
D2PAK
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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