IXYS - IXTH6N100D2

KEY Part #: K6398999

IXTH6N100D2 Bei (USD) [14843pcs Hisa]

  • 1 pcs$3.05405
  • 10 pcs$2.74865
  • 100 pcs$2.26000
  • 500 pcs$1.89351
  • 1,000 pcs$1.64919

Nambari ya Sehemu:
IXTH6N100D2
Mzalishaji:
IXYS
Maelezo ya kina:
MOSFET N-CH 1000V 6A TO247.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Thyristors - SCRs - Moduli, Viwango - Bridge Rectifiers, Transistors - IGBTs - Moja, Thyristors - SCR, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Rectifiers - Arrays and Transistors - Bipolar (BJT) - Kufika ...
Faida ya Ushindani:
We specialize in IXYS IXTH6N100D2 electronic components. IXTH6N100D2 can be shipped within 24 hours after order. If you have any demands for IXTH6N100D2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTH6N100D2 Sifa za Bidhaa

Nambari ya Sehemu : IXTH6N100D2
Mzalishaji : IXYS
Maelezo : MOSFET N-CH 1000V 6A TO247
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 1000V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : -
Njia ya Kutumia (Max) @ Id, Vgs : 2.2 Ohm @ 3A, 0V
Vgs (th) (Max) @ Id : -
Malango ya Lango (Qg) (Max) @ Vgs : 95nC @ 5V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2650pF @ 25V
Makala ya FET : Depletion Mode
Kuondoa Nguvu (Max) : 300W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-247 (IXTH)
Kifurushi / Kesi : TO-247-3

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