Infineon Technologies - IPI50R299CPXKSA1

KEY Part #: K6405545

IPI50R299CPXKSA1 Bei (USD) [8681pcs Hisa]

  • 1 pcs$0.99090
  • 10 pcs$0.89306
  • 100 pcs$0.71775

Nambari ya Sehemu:
IPI50R299CPXKSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 500V 12A TO262-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Transistors - FET, MOSFETs - Moja, Transistors - FET, MOSFETs - RF, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - Moja and Viwango - Rectifiers - Arrays ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPI50R299CPXKSA1 Sifa za Bidhaa

Nambari ya Sehemu : IPI50R299CPXKSA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 500V 12A TO262-3
Mfululizo : CoolMOS™
Hali ya Sehemu : Obsolete
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 500V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 12A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 299 mOhm @ 6.6A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 440µA
Malango ya Lango (Qg) (Max) @ Vgs : 31nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1190pF @ 100V
Makala ya FET : -
Kuondoa Nguvu (Max) : 104W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : PG-TO262-3
Kifurushi / Kesi : TO-262-3 Long Leads, I²Pak, TO-262AA

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