[1242pcs Hisa]
- Nambari ya Sehemu:
- IPI023NE7N3 G
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 75V 120A TO262-3.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Rectifiers - Arrays, Viwango - Zener - Arrays, Viwango - Zener - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Viwango - Rectifiers - Moja ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IPI023NE7N3 G electronic components. IPI023NE7N3 G can be shipped within 24 hours after order. If you have any demands for IPI023NE7N3 G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPI023NE7N3 G Sifa za Bidhaa
Nambari ya Sehemu :
IPI023NE7N3 G
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 75V 120A TO262-3
Mfululizo :
OptiMOS™
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
75V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
120A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
-
Njia ya Kutumia (Max) @ Id, Vgs :
2.3 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
3.8V @ 273µA
Malango ya Lango (Qg) (Max) @ Vgs :
206nC @ 10V
Vgs (Max) :
-
Uingizwaji uwezo (Ciss) (Max) @ Vds :
14400pF @ 37.5V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
300W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
PG-TO262-3
Kifurushi / Kesi :
TO-262-3 Long Leads, I²Pak, TO-262AA
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