Vishay Siliconix - SIRA62DP-T1-RE3

KEY Part #: K6396115

SIRA62DP-T1-RE3 Bei (USD) [140802pcs Hisa]

  • 1 pcs$0.26269

Nambari ya Sehemu:
SIRA62DP-T1-RE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CHAN 30V.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Arrays, Thyristors - SCR, Transistors - FET, MOSFETs - Moja, Moduli za Dereva za Nguvu, Transistors - JFETs, Transistors - Ushirikiano uliopangwa, Viwango - RF and Viwango - Rectifiers - Moja ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SIRA62DP-T1-RE3 electronic components. SIRA62DP-T1-RE3 can be shipped within 24 hours after order. If you have any demands for SIRA62DP-T1-RE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIRA62DP-T1-RE3 Sifa za Bidhaa

Nambari ya Sehemu : SIRA62DP-T1-RE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CHAN 30V
Mfululizo : TrenchFET® Gen IV
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 51.4A (Ta), 80A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 1.2 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 93nC @ 10V
Vgs (Max) : +16V, -12V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 4460pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 5.2W (Ta), 65.7W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PowerPAK® SO-8
Kifurushi / Kesi : PowerPAK® SO-8

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