BSZ0910NDXTMA1 Bei (USD) [171885pcs Hisa]
- 1 pcs$0.21519
- Nambari ya Sehemu:
- BSZ0910NDXTMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- DIFFERENTIATED MOSFETS.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Moja, Viwango - Bridge Rectifiers, Viwango - RF, Thyristors - DIAC, SIDAC, Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - TRIAC and Moduli za Dereva za Nguvu ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies BSZ0910NDXTMA1 electronic components. BSZ0910NDXTMA1 can be shipped within 24 hours after order. If you have any demands for BSZ0910NDXTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ0910NDXTMA1 Sifa za Bidhaa
Nambari ya Sehemu :
BSZ0910NDXTMA1
Mzalishaji :
Infineon Technologies
Maelezo :
DIFFERENTIATED MOSFETS
Mfululizo :
OptiMOS™
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Logic Level Gate, 4.5V Drive
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
9.5A (Ta), 25A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs :
9.5 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
5.6nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
800pF @ 15V
Nguvu - Max :
1.9W (Ta), 31W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-PowerVDFN
Kifurushi cha Kifaa cha Mtoaji :
PG-WISON-8
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