Nambari ya Sehemu :
IXFT150N17T2
Mfululizo :
HiPerFET™, TrenchT2™
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
175V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
150A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
12 mOhm @ 75A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
233nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
14600pF @ 25V
Kuondoa Nguvu (Max) :
880W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
TO-268
Kifurushi / Kesi :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA