Nambari ya Sehemu :
SI5471DC-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET P-CH 20V 6A 1206-8
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
1.8V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
20 mOhm @ 9.1A, 4.5V
Vgs (th) (Max) @ Id :
1.1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
96nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2945pF @ 10V
Kuondoa Nguvu (Max) :
2.5W (Ta), 6.3W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
1206-8 ChipFET™
Kifurushi / Kesi :
8-SMD, Flat Lead