Diodes Incorporated - DMN13H750S-7

KEY Part #: K6416161

DMN13H750S-7 Bei (USD) [409104pcs Hisa]

  • 1 pcs$0.09041
  • 3,000 pcs$0.08092

Nambari ya Sehemu:
DMN13H750S-7
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET N-CH 130V 1A SOT23.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Transistors - FET, MOSFETs - RF, Viwango - Rectifiers - Moja, Viwango - Zener - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - JFETs, Viwango - Zener - Arrays and Thyristors - SCRs - Moduli ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN13H750S-7 Sifa za Bidhaa

Nambari ya Sehemu : DMN13H750S-7
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET N-CH 130V 1A SOT23
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 130V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 1A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 6V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 750 mOhm @ 2A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 5.6nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 231pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 770mW (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : SOT-23
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3