[12365pcs Hisa]
- Nambari ya Sehemu:
- STB23NM60N
- Mzalishaji:
- STMicroelectronics
- Maelezo ya kina:
- MOSFET N-CH 600V 19A D2PAK.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Moja, Thyristors - DIAC, SIDAC, Thyristors - SCR, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Viwango - RF ...
- Faida ya Ushindani:
- We specialize in STMicroelectronics STB23NM60N electronic components. STB23NM60N can be shipped within 24 hours after order. If you have any demands for STB23NM60N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STB23NM60N Sifa za Bidhaa
Nambari ya Sehemu :
STB23NM60N
Mzalishaji :
STMicroelectronics
Maelezo :
MOSFET N-CH 600V 19A D2PAK
Mfululizo :
MDmesh™ II
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
19A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
180 mOhm @ 9.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
60nC @ 10V
Vgs (Max) :
±25V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2050pF @ 50V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
150W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
D2PAK
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Habari mpya kabisa
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