[13157pcs Hisa]
- Nambari ya Sehemu:
- SI1050X-T1-E3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET N-CH 8V 1.34A SOT563F.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Moja, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - JFETs, Thyristors - SCR, Thyristors - TRIAC and Transistors - FET, MOSFETs - RF ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI1050X-T1-E3 electronic components. SI1050X-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI1050X-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI1050X-T1-E3 Sifa za Bidhaa
Nambari ya Sehemu :
SI1050X-T1-E3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N-CH 8V 1.34A SOT563F
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
8V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
1.34A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
1.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
86 mOhm @ 1.34A, 4.5V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
11.6nC @ 5V
Vgs (Max) :
±5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
585pF @ 4V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
236mW (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
SC-89-6
Kifurushi / Kesi :
SOT-563, SOT-666
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