Infineon Technologies - BSP317PH6327XTSA1

KEY Part #: K6411697

BSP317PH6327XTSA1 Bei (USD) [242855pcs Hisa]

  • 1 pcs$0.15230
  • 1,000 pcs$0.13031

Nambari ya Sehemu:
BSP317PH6327XTSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET P-CH 250V 0.43A SOT223.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Moja, Transistors - FET, MOSFETs - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - IGBTs - Arrays, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Transistors - Ushirikiano uliopangwa ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSP317PH6327XTSA1 Sifa za Bidhaa

Nambari ya Sehemu : BSP317PH6327XTSA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET P-CH 250V 0.43A SOT223
Mfululizo : SIPMOS®
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 250V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 430mA (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 4 Ohm @ 430mA, 10V
Vgs (th) (Max) @ Id : 2V @ 370µA
Malango ya Lango (Qg) (Max) @ Vgs : 15.1nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 262pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 1.8W (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-SOT223-4
Kifurushi / Kesi : TO-261-4, TO-261AA

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