BSZ0901NSIATMA1 Bei (USD) [176341pcs Hisa]
- 1 pcs$0.20975
- Nambari ya Sehemu:
- BSZ0901NSIATMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 30V 40A TSDSON.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Kusudi Maalum, Viwango - Zener - Moja, Viwango - Zener - Arrays, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Rectifiers - Moja and Thyristors - DIAC, SIDAC ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies BSZ0901NSIATMA1 electronic components. BSZ0901NSIATMA1 can be shipped within 24 hours after order. If you have any demands for BSZ0901NSIATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ0901NSIATMA1 Sifa za Bidhaa
Nambari ya Sehemu :
BSZ0901NSIATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 30V 40A TSDSON
Mfululizo :
OptiMOS™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
25A (Ta), 40A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
2.1 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
41nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2600pF @ 15V
Makala ya FET :
Schottky Diode (Body)
Kuondoa Nguvu (Max) :
2.1W (Ta), 69W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-TSDSON-8-FL
Kifurushi / Kesi :
8-PowerTDFN
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