Transphorm - TPD3215M

KEY Part #: K6522772

TPD3215M Bei (USD) [522pcs Hisa]

  • 1 pcs$97.80421
  • 10 pcs$93.08330

Nambari ya Sehemu:
TPD3215M
Mzalishaji:
Transphorm
Maelezo ya kina:
GANFET 2N-CH 600V 70A MODULE.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Transistors - Bipolar (BJT) - RF, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - IGBTs - Moduli and Transistors - IGBTs - Moja ...
Faida ya Ushindani:
We specialize in Transphorm TPD3215M electronic components. TPD3215M can be shipped within 24 hours after order. If you have any demands for TPD3215M, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPD3215M Sifa za Bidhaa

Nambari ya Sehemu : TPD3215M
Mzalishaji : Transphorm
Maelezo : GANFET 2N-CH 600V 70A MODULE
Mfululizo : -
Hali ya Sehemu : Obsolete
Aina ya FET : 2 N-Channel (Half Bridge)
Makala ya FET : GaNFET (Gallium Nitride)
Kukata kwa Voltage Voltage (Vdss) : 600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 70A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs : 34 mOhm @ 30A, 8V
Vgs (th) (Max) @ Id : -
Malango ya Lango (Qg) (Max) @ Vgs : 28nC @ 8V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2260pF @ 100V
Nguvu - Max : 470W
Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : Module
Kifurushi cha Kifaa cha Mtoaji : Module