Transphorm 650V GaN FETs in TO-220 Packages
Transphorm 650V GaN FETs in TO-220 Packages combine state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies. The devices offer superior reliability and performance with improved efficiency over silicon. The FETs have a lower gate charge, lower crossover loss, and a smaller reverse recovery charge.
Features
JEDEC qualified GaN technologyDynamic RDS(on)eff production testedRobust design, defined by
Intrinsic lifetime testsWide gate safety marginTransient over-voltage capabilityVery low QRRReduced crossover lossRoHS compliant and Halogen-free packaging
Intrinsic lifetime testsWide gate safety marginTransient over-voltage capabilityVery low QRRReduced crossover lossRoHS compliant and Halogen-free packaging
Applications
DatacomBroad industrial
Transphorm Newest
Transphorm Automotive (AEC-Q101) Qualified GaN FETs are normally-off devices that offer superior reliability and performance.
Date: 2019-08-06Transphorm Half Bridge (DC to DC) Evaluation Platform provides the elements of a simple buck or boost converter for studying switching characteristics and efficiency.
Date: 2019-06-03Transphorm 650V GaN FETs combine state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies.
Date: 2019-06-03Transphorm 4kW Totem-Pole PFC Board achieves very high efficiency single-phase AC-DC conversion.
Date: 2019-06-03Transphorm 650V GaN FETs in TO-247 Packages combine state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies.
Date: 2019-06-03Transphorm 2.5kW Totem-Pole PFC Board achieves very high efficiency single-phase AC-DC conversion.
Date: 2019-06-03