[8765pcs Hisa]
- Nambari ya Sehemu:
- IRF8302MTR1PBF
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N CH 30V 31A MX.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Thyristors - SCR, Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - Moja, Transistors - IGBTs - Moja, Viwango - Rectifiers - Moja and Transistors - Bipolar (BJT) - RF ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IRF8302MTR1PBF electronic components. IRF8302MTR1PBF can be shipped within 24 hours after order. If you have any demands for IRF8302MTR1PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF8302MTR1PBF Sifa za Bidhaa
Nambari ya Sehemu :
IRF8302MTR1PBF
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N CH 30V 31A MX
Mfululizo :
HEXFET®
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
31A (Ta), 190A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.8 mOhm @ 31A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 150µA
Malango ya Lango (Qg) (Max) @ Vgs :
53nC @ 4.5V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
6030pF @ 15V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
2.8W (Ta), 104W (Tc)
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
DIRECTFET™ MX
Kifurushi / Kesi :
DirectFET™ Isometric MX
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