Vishay Siliconix - SIR632DP-T1-RE3

KEY Part #: K6419891

SIR632DP-T1-RE3 Bei (USD) [142207pcs Hisa]

  • 1 pcs$0.66478
  • 10 pcs$0.58868
  • 100 pcs$0.46539
  • 500 pcs$0.34141
  • 1,000 pcs$0.26953

Nambari ya Sehemu:
SIR632DP-T1-RE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CH 150V 29A POWERPAKSO.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Thyristors - SCR, Viwango - RF, Transistors - JFETs, Viwango - Rectifiers - Arrays, Transistors - IGBTs - Moja, Transistors - IGBTs - Moduli and Viwango - Zener - Arrays ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SIR632DP-T1-RE3 electronic components. SIR632DP-T1-RE3 can be shipped within 24 hours after order. If you have any demands for SIR632DP-T1-RE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIR632DP-T1-RE3 Sifa za Bidhaa

Nambari ya Sehemu : SIR632DP-T1-RE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CH 150V 29A POWERPAKSO
Mfululizo : ThunderFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 150V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 29A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 7.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 34.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 17nC @ 7.5V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 740pF @ 75V
Makala ya FET : -
Kuondoa Nguvu (Max) : 69.5W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PowerPAK® SO-8
Kifurushi / Kesi : PowerPAK® SO-8

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