IPB65R660CFDAATMA1 Bei (USD) [82571pcs Hisa]
- 1 pcs$0.47354
- 1,000 pcs$0.43440
- Nambari ya Sehemu:
- IPB65R660CFDAATMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH TO263-3.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Kufika, Transistors - IGBTs - Arrays, Thyristors - TRIAC, Transistors - FET, MOSFETs - Moja, Thyristors - DIAC, SIDAC, Thyristors - SCRs - Moduli and Transistors - FET, MOSFETs - RF ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IPB65R660CFDAATMA1 electronic components. IPB65R660CFDAATMA1 can be shipped within 24 hours after order. If you have any demands for IPB65R660CFDAATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB65R660CFDAATMA1 Sifa za Bidhaa
Nambari ya Sehemu :
IPB65R660CFDAATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH TO263-3
Mfululizo :
Automotive, AEC-Q101, CoolMOS™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
650V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
660 mOhm @ 3.2A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 200µA
Malango ya Lango (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
543pF @ 100V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
62.5W (Tc)
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
D²PAK (TO-263AB)
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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