TPN4R712MD,L1Q Bei (USD) [342569pcs Hisa]
- 1 pcs$0.11510
- 5,000 pcs$0.11453
- Nambari ya Sehemu:
- TPN4R712MD,L1Q
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- MOSFET P-CH 20V 36A 8TSON ADV.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - RF, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Moja, Viwango - Zener - Arrays and Transistors - FET, MOSFETs - Moja ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage TPN4R712MD,L1Q electronic components. TPN4R712MD,L1Q can be shipped within 24 hours after order. If you have any demands for TPN4R712MD,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN4R712MD,L1Q Sifa za Bidhaa
Nambari ya Sehemu :
TPN4R712MD,L1Q
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET P-CH 20V 36A 8TSON ADV
Mfululizo :
U-MOSVI
Hali ya Sehemu :
Active
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
36A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
4.7 mOhm @ 18A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
65nC @ 5V
Vgs (Max) :
±12V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
4300pF @ 10V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
42W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-TSON Advance (3.3x3.3)
Kifurushi / Kesi :
8-PowerVDFN
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