Nambari ya Sehemu :
PHN210,118
Mzalishaji :
NXP USA Inc.
Maelezo :
MOSFET 2N-CH 30V 8SOIC
Hali ya Sehemu :
Obsolete
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
-
Njia ya Kutumia (Max) @ Id, Vgs :
100 mOhm @ 2.2A, 10V
Vgs (th) (Max) @ Id :
2.8V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
6nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
250pF @ 20V
Joto la Kufanya kazi :
-65°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Mtoaji :
8-SO