NXP USA Inc. - PHN210,118

KEY Part #: K6522988

[4315pcs Hisa]


    Nambari ya Sehemu:
    PHN210,118
    Mzalishaji:
    NXP USA Inc.
    Maelezo ya kina:
    MOSFET 2N-CH 30V 8SOIC.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - RF, Thyristors - SCR, Viwango - Bridge Rectifiers, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - FET, MOSFETs - Moja, Thyristors - SCRs - Moduli and Viwango - Zener - Arrays ...
    Faida ya Ushindani:
    We specialize in NXP USA Inc. PHN210,118 electronic components. PHN210,118 can be shipped within 24 hours after order. If you have any demands for PHN210,118, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PHN210,118 Sifa za Bidhaa

    Nambari ya Sehemu : PHN210,118
    Mzalishaji : NXP USA Inc.
    Maelezo : MOSFET 2N-CH 30V 8SOIC
    Mfululizo : TrenchMOS™
    Hali ya Sehemu : Obsolete
    Aina ya FET : 2 N-Channel (Dual)
    Makala ya FET : Logic Level Gate
    Kukata kwa Voltage Voltage (Vdss) : 30V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : -
    Njia ya Kutumia (Max) @ Id, Vgs : 100 mOhm @ 2.2A, 10V
    Vgs (th) (Max) @ Id : 2.8V @ 1mA
    Malango ya Lango (Qg) (Max) @ Vgs : 6nC @ 10V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 250pF @ 20V
    Nguvu - Max : 2W
    Joto la Kufanya kazi : -65°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)
    Kifurushi cha Kifaa cha Mtoaji : 8-SO

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