TSM061NA03CV RGG Bei (USD) [194697pcs Hisa]
- 1 pcs$0.18997
- Nambari ya Sehemu:
- TSM061NA03CV RGG
- Mzalishaji:
- Taiwan Semiconductor Corporation
- Maelezo ya kina:
- MOSFET N-CH 30V 66A 8PDFN.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Arrays, Viwango - Bridge Rectifiers, Transistors - FET, MOSFETs - Arrays, Transistors - FET, MOSFETs - RF, Viwango - Rectifiers - Arrays, Transistors - Ushirikiano uliopangwa, Viwango - RF and Moduli za Dereva za Nguvu ...
- Faida ya Ushindani:
- We specialize in Taiwan Semiconductor Corporation TSM061NA03CV RGG electronic components. TSM061NA03CV RGG can be shipped within 24 hours after order. If you have any demands for TSM061NA03CV RGG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM061NA03CV RGG Sifa za Bidhaa
Nambari ya Sehemu :
TSM061NA03CV RGG
Mzalishaji :
Taiwan Semiconductor Corporation
Maelezo :
MOSFET N-CH 30V 66A 8PDFN
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
66A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
6.1 mOhm @ 16A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
19.3nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1136pF @ 15V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
44.6W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-PDFN (3x3)
Kifurushi / Kesi :
8-PowerWDFN
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