Infineon Technologies - AUIRFN7110TR

KEY Part #: K6401738

AUIRFN7110TR Bei (USD) [2946pcs Hisa]

  • 4,000 pcs$0.48429

Nambari ya Sehemu:
AUIRFN7110TR
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET NCH 100V 58A PQFN.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Kufika, Viwango - Rectifiers - Moja, Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Viwango - RF ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AUIRFN7110TR Sifa za Bidhaa

Nambari ya Sehemu : AUIRFN7110TR
Mzalishaji : Infineon Technologies
Maelezo : MOSFET NCH 100V 58A PQFN
Mfululizo : Automotive, AEC-Q101, HEXFET®
Hali ya Sehemu : Obsolete
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 58A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 14.5 mOhm @ 35A, 10V
Vgs (th) (Max) @ Id : 4V @ 100µA
Malango ya Lango (Qg) (Max) @ Vgs : 74nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 3050pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 4.3W (Ta), 125W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 8-PQFN (5x6)
Kifurushi / Kesi : 8-PowerTDFN

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