Infineon Technologies - BSZ900N15NS3GATMA1

KEY Part #: K6420359

BSZ900N15NS3GATMA1 Bei (USD) [187296pcs Hisa]

  • 1 pcs$0.19748

Nambari ya Sehemu:
BSZ900N15NS3GATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 150V 13A TDSON-8.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Transistors - FET, MOSFETs - Arrays, Transistors - FET, MOSFETs - RF, Viwango - RF, Thyristors - SCRs - Moduli, Transistors - FET, MOSFETs - Moja, Viwango - Zener - Arrays and Transistors - IGBTs - Arrays ...
Faida ya Ushindani:
We specialize in Infineon Technologies BSZ900N15NS3GATMA1 electronic components. BSZ900N15NS3GATMA1 can be shipped within 24 hours after order. If you have any demands for BSZ900N15NS3GATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSZ900N15NS3GATMA1 Sifa za Bidhaa

Nambari ya Sehemu : BSZ900N15NS3GATMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 150V 13A TDSON-8
Mfululizo : OptiMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 150V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 13A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 8V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 90 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 4V @ 20µA
Malango ya Lango (Qg) (Max) @ Vgs : 7nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 510pF @ 75V
Makala ya FET : -
Kuondoa Nguvu (Max) : 38W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-TSDSON-8
Kifurushi / Kesi : 8-PowerTDFN

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