Infineon Technologies - IPI70N10S312AKSA1

KEY Part #: K6418988

IPI70N10S312AKSA1 Bei (USD) [85773pcs Hisa]

  • 1 pcs$0.45586
  • 500 pcs$0.41820

Nambari ya Sehemu:
IPI70N10S312AKSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 100V 70A TO262-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Transistors - IGBTs - Moduli, Viwango - Zener - Arrays, Transistors - FET, MOSFETs - Moja, Thyristors - SCR, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Viwango - Zener - Moja ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPI70N10S312AKSA1 Sifa za Bidhaa

Nambari ya Sehemu : IPI70N10S312AKSA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 100V 70A TO262-3
Mfululizo : OptiMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 70A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 11.6 mOhm @ 70A, 10V
Vgs (th) (Max) @ Id : 4V @ 83µA
Malango ya Lango (Qg) (Max) @ Vgs : 66nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 4355pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 125W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : PG-TO262-3
Kifurushi / Kesi : TO-262-3 Long Leads, I²Pak, TO-262AA

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