Infineon Technologies - IRFB17N20D

KEY Part #: K6414622

[12691pcs Hisa]


    Nambari ya Sehemu:
    IRFB17N20D
    Mzalishaji:
    Infineon Technologies
    Maelezo ya kina:
    MOSFET N-CH 200V 16A TO-220AB.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Transistors - IGBTs - Moduli, Transistors - IGBTs - Arrays, Thyristors - TRIAC, Viwango - Rectifiers - Arrays, Viwango - Zener - Arrays, Viwango - Rectifiers - Moja and Transistors - FET, MOSFETs - RF ...
    Faida ya Ushindani:
    We specialize in Infineon Technologies IRFB17N20D electronic components. IRFB17N20D can be shipped within 24 hours after order. If you have any demands for IRFB17N20D, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFB17N20D Sifa za Bidhaa

    Nambari ya Sehemu : IRFB17N20D
    Mzalishaji : Infineon Technologies
    Maelezo : MOSFET N-CH 200V 16A TO-220AB
    Mfululizo : HEXFET®
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 200V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 16A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 170 mOhm @ 9.8A, 10V
    Vgs (th) (Max) @ Id : 5.5V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 50nC @ 10V
    Vgs (Max) : ±30V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 1100pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 3.8W (Ta), 140W (Tc)
    Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
    Aina ya Kuinua : Through Hole
    Kifurushi cha Kifaa cha Mtoaji : TO-220AB
    Kifurushi / Kesi : TO-220-3

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