TPN11006NL,LQ Bei (USD) [298599pcs Hisa]
- 1 pcs$0.13631
- 3,000 pcs$0.13563
- Nambari ya Sehemu:
- TPN11006NL,LQ
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- MOSFET N-CH 60V 17A 8TSON.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Transistors - Ushirikiano uliopangwa, Viwango - Zener - Arrays, Moduli za Dereva za Nguvu, Transistors - Kusudi Maalum, Viwango - Bridge Rectifiers, Transistors - IGBTs - Moduli and Transistors - Bipolar (BJT) - Kufika ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage TPN11006NL,LQ electronic components. TPN11006NL,LQ can be shipped within 24 hours after order. If you have any demands for TPN11006NL,LQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN11006NL,LQ Sifa za Bidhaa
Nambari ya Sehemu :
TPN11006NL,LQ
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N-CH 60V 17A 8TSON
Mfululizo :
U-MOSVIII-H
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
17A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
11.4 mOhm @ 8.5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 200µA
Malango ya Lango (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2000pF @ 30V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
700mW (Ta), 30W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-TSON Advance (3.3x3.3)
Kifurushi / Kesi :
8-PowerVDFN
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