TK35E08N1,S1X Bei (USD) [110596pcs Hisa]
- 1 pcs$0.39086
- 50 pcs$0.38892
- Nambari ya Sehemu:
- TK35E08N1,S1X
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- MOSFET N-CH 80V 55A TO-220.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Moja, Transistors - Bipolar (BJT) - RF, Transistors - Ushirikiano uliopangwa, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - JFETs, Transistors - IGBTs - Moja and Transistors - IGBTs - Arrays ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage TK35E08N1,S1X electronic components. TK35E08N1,S1X can be shipped within 24 hours after order. If you have any demands for TK35E08N1,S1X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK35E08N1,S1X Sifa za Bidhaa
Nambari ya Sehemu :
TK35E08N1,S1X
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N-CH 80V 55A TO-220
Mfululizo :
U-MOSVIII-H
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
80V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
55A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
12.2 mOhm @ 17.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 300µA
Malango ya Lango (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1700pF @ 40V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
72W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-220
Kifurushi / Kesi :
TO-220-3
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