Vishay Siliconix - SUD23N06-31-T4-GE3

KEY Part #: K6419898

SUD23N06-31-T4-GE3 Bei (USD) [142562pcs Hisa]

  • 1 pcs$0.25945
  • 2,500 pcs$0.24363

Nambari ya Sehemu:
SUD23N06-31-T4-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CH 60V 21.4A TO252.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Kufika, Thyristors - SCR, Transistors - Kusudi Maalum, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - DIAC, SIDAC and Viwango - Rectifiers - Moja ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SUD23N06-31-T4-GE3 electronic components. SUD23N06-31-T4-GE3 can be shipped within 24 hours after order. If you have any demands for SUD23N06-31-T4-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SUD23N06-31-T4-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SUD23N06-31-T4-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CH 60V 21.4A TO252
Mfululizo : TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 21.4A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 31 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 17nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 670pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 5.7W (Ta), 31.25W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : TO-252, (D-Pak)
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63