Infineon Technologies - BSD314SPEH6327XTSA1

KEY Part #: K6421586

BSD314SPEH6327XTSA1 Bei (USD) [914187pcs Hisa]

  • 1 pcs$0.04046
  • 3,000 pcs$0.03872

Nambari ya Sehemu:
BSD314SPEH6327XTSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET P-CH 30V 1.5A SOT363.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kufika, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - SCR, Viwango - Zener - Arrays, Thyristors - DIAC, SIDAC and Transistors - Ushirikiano uliopangwa ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSD314SPEH6327XTSA1 Sifa za Bidhaa

Nambari ya Sehemu : BSD314SPEH6327XTSA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET P-CH 30V 1.5A SOT363
Mfululizo : OptiMOS™
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 1.5A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 140 mOhm @ 1.5A, 10V
Vgs (th) (Max) @ Id : 2V @ 6.3µA
Malango ya Lango (Qg) (Max) @ Vgs : 2.9nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 294pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 500mW (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-SOT363-6
Kifurushi / Kesi : 6-VSSOP, SC-88, SOT-363