DMN6069SFG-13 Bei (USD) [350660pcs Hisa]
- 1 pcs$0.10548
- 3,000 pcs$0.09441
- Nambari ya Sehemu:
- DMN6069SFG-13
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET N-CH 60V 5.6A POWERDI333.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Transistors - Kusudi Maalum, Transistors - IGBTs - Arrays, Thyristors - SCR, Viwango - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Rectifiers - Moja and Thyristors - TRIAC ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMN6069SFG-13 electronic components. DMN6069SFG-13 can be shipped within 24 hours after order. If you have any demands for DMN6069SFG-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN6069SFG-13 Sifa za Bidhaa
Nambari ya Sehemu :
DMN6069SFG-13
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET N-CH 60V 5.6A POWERDI333
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
5.6A (Ta), 18A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
50 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1480pF @ 30V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
930mW (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PowerDI3333-8
Kifurushi / Kesi :
8-PowerWDFN
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