CSD13306WT Bei (USD) [259492pcs Hisa]
- 1 pcs$0.14254
- 250 pcs$0.12102
- 1,250 pcs$0.07530
- Nambari ya Sehemu:
- CSD13306WT
- Mzalishaji:
- Texas Instruments
- Maelezo ya kina:
- MOSFET N-CH 12V 6DSBGA.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Transistors - FET, MOSFETs - Arrays, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Moduli, Transistors - Ushirikiano uliopangwa, Moduli za Dereva za Nguvu and Thyristors - SCRs - Moduli ...
- Faida ya Ushindani:
- We specialize in Texas Instruments CSD13306WT electronic components. CSD13306WT can be shipped within 24 hours after order. If you have any demands for CSD13306WT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD13306WT Sifa za Bidhaa
Nambari ya Sehemu :
CSD13306WT
Mzalishaji :
Texas Instruments
Maelezo :
MOSFET N-CH 12V 6DSBGA
Mfululizo :
NexFET™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
12V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
3.5A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
10.2 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ Id :
1.3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
11.2nC @ 4.5V
Vgs (Max) :
±10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1370pF @ 6V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
1.9W (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
6-DSBGA (1x1.5)
Kifurushi / Kesi :
6-UFBGA, DSBGA
Habari mpya kabisa
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