SQ2301ES-T1_GE3 Bei (USD) [485597pcs Hisa]
- 1 pcs$0.07617
- 3,000 pcs$0.06474
- Nambari ya Sehemu:
- SQ2301ES-T1_GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET P-CH 20V 3.9A TO236.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Moduli, Viwango - RF, Viwango - Zener - Moja, Transistors - FET, MOSFETs - Moja, Thyristors - DIAC, SIDAC, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SQ2301ES-T1_GE3 electronic components. SQ2301ES-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ2301ES-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ2301ES-T1_GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SQ2301ES-T1_GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET P-CH 20V 3.9A TO236
Mfululizo :
Automotive, AEC-Q101, TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
3.9A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
120 mOhm @ 2.8A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
8nC @ 4.5V
Vgs (Max) :
±8V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
425pF @ 10V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
3W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TA)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
TO-236 (SOT-23)
Kifurushi / Kesi :
TO-236-3, SC-59, SOT-23-3
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