RS1E130GNTB Bei (USD) [507028pcs Hisa]
- 1 pcs$0.08065
- 2,500 pcs$0.08025
- Nambari ya Sehemu:
- RS1E130GNTB
- Mzalishaji:
- Rohm Semiconductor
- Maelezo ya kina:
- MOSFET N-CH 30V 13A 8-HSOP.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Moduli za Dereva za Nguvu, Transistors - FET, MOSFETs - Moja, Thyristors - TRIAC, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - RF, Viwango - Zener - Moja and Transistors - FET, MOSFETs - Arrays ...
- Faida ya Ushindani:
- We specialize in Rohm Semiconductor RS1E130GNTB electronic components. RS1E130GNTB can be shipped within 24 hours after order. If you have any demands for RS1E130GNTB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RS1E130GNTB Sifa za Bidhaa
Nambari ya Sehemu :
RS1E130GNTB
Mzalishaji :
Rohm Semiconductor
Maelezo :
MOSFET N-CH 30V 13A 8-HSOP
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
13A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
11.7 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
7.9nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
420pF @ 15V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
3W (Ta), 22.2W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-HSOP
Kifurushi / Kesi :
8-PowerTDFN
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