Nambari ya Sehemu :
RN1427TE85LF
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
TRANS PREBIAS NPN 200MW SMINI
Aina ya Transistor :
NPN - Pre-Biased
Sasa - Mtoza (Ic) (Max) :
800mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
50V
Upinzani - Msingi (R1) :
2.2 kOhms
Upinzani - Base ya Emitter (R2) :
10 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
90 @ 100mA, 1V
Vce Saturdayation (Max) @ Ib, Ic :
250mV @ 1mA, 50mA
Sasa - Ushuru Mtoaji :
500nA
Mara kwa mara - Mpito :
300MHz
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
TO-236-3, SC-59, SOT-23-3
Kifurushi cha Kifaa cha Mtoaji :
S-Mini