Infineon Technologies - BCR169E6327HTSA1

KEY Part #: K6528772

BCR169E6327HTSA1 Bei (USD) [3612259pcs Hisa]

  • 1 pcs$0.01415
  • 3,000 pcs$0.01408

Nambari ya Sehemu:
BCR169E6327HTSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
TRANS PREBIAS PNP 200MW SOT23-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Viwango - RF, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Transistors - Bipolar (BJT) - Kufika ...
Faida ya Ushindani:
We specialize in Infineon Technologies BCR169E6327HTSA1 electronic components. BCR169E6327HTSA1 can be shipped within 24 hours after order. If you have any demands for BCR169E6327HTSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BCR169E6327HTSA1 Sifa za Bidhaa

Nambari ya Sehemu : BCR169E6327HTSA1
Mzalishaji : Infineon Technologies
Maelezo : TRANS PREBIAS PNP 200MW SOT23-3
Mfululizo : -
Hali ya Sehemu : Last Time Buy
Aina ya Transistor : PNP - Pre-Biased
Sasa - Mtoza (Ic) (Max) : 100mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 4.7 kOhms
Upinzani - Base ya Emitter (R2) : -
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 120 @ 5mA, 5V
Vce Saturdayation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
Sasa - Ushuru Mtoaji : 100nA (ICBO)
Mara kwa mara - Mpito : 200MHz
Nguvu - Max : 200mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3
Kifurushi cha Kifaa cha Mtoaji : SOT-23-3

Unaweza pia Kuvutiwa Na