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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Nyumbani
  2. Bidhaa
  3. Bidhaa za Semiconductor za Disc
  4. Transistors - Bipolar (BJT) - Moja, Iliyopendekezw
  5. FJN3314RTA

ON Semiconductor - FJN3314RTA

KEY Part #: K6527825

FJN3314RTA Bei (USD) [2702pcs Hisa]

  • 2,000 pcs$0.01538
  • 6,000 pcs$0.01337
  • 10,000 pcs$0.01137
  • 50,000 pcs$0.01003
  • 100,000 pcs$0.00891
Nambari ya Sehemu:
FJN3314RTA
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
TRANS PREBIAS NPN 300MW TO92-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Transistors - FET, MOSFETs - Moja, Transistors - Kusudi Maalum, Viwango - Bridge Rectifiers, Thyristors - SCR, Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - RF and Thyristors - DIAC, SIDAC ...
Faida ya Ushindani:
We specialize in ON Semiconductor FJN3314RTA electronic components. FJN3314RTA can be shipped within 24 hours after order. If you have any demands for FJN3314RTA, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FJN3314RTA Sifa za Bidhaa

Nambari ya Sehemu : FJN3314RTA
Mzalishaji : ON Semiconductor
Maelezo : TRANS PREBIAS NPN 300MW TO92-3
Mfululizo : -
Hali ya Sehemu : Last Time Buy
Aina ya Transistor : NPN - Pre-Biased
Sasa - Mtoza (Ic) (Max) : 100mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 4.7 kOhms
Upinzani - Base ya Emitter (R2) : 47 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
Vce Saturdayation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
Sasa - Ushuru Mtoaji : 100nA (ICBO)
Mara kwa mara - Mpito : 250MHz
Nguvu - Max : 300mW
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Kifurushi cha Kifaa cha Mtoaji : TO-92-3

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