[1278pcs Hisa]
- Nambari ya Sehemu:
- IRFH6200TR2PBF
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 20V 100A 5X6 PQFN.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Moduli za Dereva za Nguvu, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Kufika, Viwango - Zener - Arrays, Transistors - Kusudi Maalum, Viwango - RF and Viwango - Zener - Moja ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IRFH6200TR2PBF electronic components. IRFH6200TR2PBF can be shipped within 24 hours after order. If you have any demands for IRFH6200TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH6200TR2PBF Sifa za Bidhaa
Nambari ya Sehemu :
IRFH6200TR2PBF
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 20V 100A 5X6 PQFN
Mfululizo :
HEXFET®
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
49A (Ta), 100A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
2.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
0.95 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
1.1V @ 150µA
Malango ya Lango (Qg) (Max) @ Vgs :
230nC @ 4.5V
Vgs (Max) :
±12V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
10890pF @ 10V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
3.6W (Ta), 156W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-PQFN (5x6)
Kifurushi / Kesi :
8-PowerVDFN
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