ON Semiconductor - NVMFS5C430NWFAFT3G

KEY Part #: K6420028

NVMFS5C430NWFAFT3G Bei (USD) [153185pcs Hisa]

  • 1 pcs$0.24146
  • 5,000 pcs$0.22838

Nambari ya Sehemu:
NVMFS5C430NWFAFT3G
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 40V 35A 185A 5DFN.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Transistors - Bipolar (BJT) - Moja, Moduli za Dereva za Nguvu, Viwango - Rectifiers - Arrays, Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - DIAC, SIDAC and Transistors - IGBTs - Moduli ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVMFS5C430NWFAFT3G Sifa za Bidhaa

Nambari ya Sehemu : NVMFS5C430NWFAFT3G
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 40V 35A 185A 5DFN
Mfululizo : Automotive, AEC-Q101
Hali ya Sehemu : Not For New Designs
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 40V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 35A (Ta), 185A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 1.7 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 47nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 3300pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 3.8W (Ta), 106W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 5-DFN (5x6) (8-SOFL)
Kifurushi / Kesi : 8-PowerTDFN, 5 Leads

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