Infineon Technologies - BSZ0909NDXTMA1

KEY Part #: K6525304

BSZ0909NDXTMA1 Bei (USD) [181450pcs Hisa]

  • 1 pcs$0.20384
  • 5,000 pcs$0.18695

Nambari ya Sehemu:
BSZ0909NDXTMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET 2 N-CH 30V 20A WISON-8.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - DIAC, SIDAC, Transistors - FET, MOSFETs - RF, Transistors - JFETs, Viwango - Zener - Moja and Viwango - Bridge Rectifiers ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSZ0909NDXTMA1 Sifa za Bidhaa

Nambari ya Sehemu : BSZ0909NDXTMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET 2 N-CH 30V 20A WISON-8
Mfululizo : OptiMOS™
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Logic Level Gate, 4.5V Drive
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 20A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs : 18 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 2.6nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 360pF @ 15V
Nguvu - Max : 17W
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 8-PowerVDFN
Kifurushi cha Kifaa cha Mtoaji : PG-WISON-8