ON Semiconductor - FDD4N60NZ

KEY Part #: K6392696

FDD4N60NZ Bei (USD) [231873pcs Hisa]

  • 1 pcs$0.16631
  • 2,500 pcs$0.16549

Nambari ya Sehemu:
FDD4N60NZ
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N CH 600V 3.4A DPAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Viwango - RF, Thyristors - SCR, Transistors - Bipolar (BJT) - Moja, Transistors - Kusudi Maalum, Viwango - Rectifiers - Arrays, Viwango - Bridge Rectifiers and Transistors - Bipolar (BJT) - RF ...
Faida ya Ushindani:
We specialize in ON Semiconductor FDD4N60NZ electronic components. FDD4N60NZ can be shipped within 24 hours after order. If you have any demands for FDD4N60NZ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDD4N60NZ Sifa za Bidhaa

Nambari ya Sehemu : FDD4N60NZ
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N CH 600V 3.4A DPAK
Mfululizo : UniFET-II™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 3.4A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 2.5 Ohm @ 1.7A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 10.8nC @ 10V
Vgs (Max) : ±25V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 510pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 114W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : DPAK
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63

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