[8605pcs Hisa]
- Nambari ya Sehemu:
- TPC8A02-H(TE12L,Q)
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- MOSFET N-CH 30V 16A SOP8 2-6J1B.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Viwango - RF, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - RF, Transistors - Ushirikiano uliopangwa, Thyristors - DIAC, SIDAC and Transistors - IGBTs - Arrays ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage TPC8A02-H(TE12L,Q) electronic components. TPC8A02-H(TE12L,Q) can be shipped within 24 hours after order. If you have any demands for TPC8A02-H(TE12L,Q), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPC8A02-H(TE12L,Q) Sifa za Bidhaa
Nambari ya Sehemu :
TPC8A02-H(TE12L,Q)
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N-CH 30V 16A SOP8 2-6J1B
Mfululizo :
-
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
16A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
5.6 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
34nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1970pF @ 10V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
1W (Ta)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-SOP (5.5x6.0)
Kifurushi / Kesi :
8-SOIC (0.173", 4.40mm Width)
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