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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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  5. NTTFS4930NTWG

ON Semiconductor - NTTFS4930NTWG

KEY Part #: K6397136

NTTFS4930NTWG Bei (USD) [393608pcs Hisa]

  • 1 pcs$0.09444
  • 5,000 pcs$0.09397
Nambari ya Sehemu:
NTTFS4930NTWG
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 30V 23A 8WDFN.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Thyristors - TRIAC, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - SCR, Moduli za Dereva za Nguvu and Transistors - Bipolar (BJT) - Moja ...
Faida ya Ushindani:
We specialize in ON Semiconductor NTTFS4930NTWG electronic components. NTTFS4930NTWG can be shipped within 24 hours after order. If you have any demands for NTTFS4930NTWG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTTFS4930NTWG Sifa za Bidhaa

Nambari ya Sehemu : NTTFS4930NTWG
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 30V 23A 8WDFN
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 4.5A (Ta), 23A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 23 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 5.5nC @ 4.5V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 476pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 790mW (Ta), 20.2W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 8-WDFN (3.3x3.3)
Kifurushi / Kesi : 8-PowerWDFN

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