Infineon Technologies - IPW60R060C7XKSA1

KEY Part #: K6416355

IPW60R060C7XKSA1 Bei (USD) [14121pcs Hisa]

  • 1 pcs$2.99730
  • 240 pcs$2.98238

Nambari ya Sehemu:
IPW60R060C7XKSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 600V 35A TO247.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Zener - Moja, Thyristors - DIAC, SIDAC, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Transistors - FET, MOSFETs - RF ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPW60R060C7XKSA1 Sifa za Bidhaa

Nambari ya Sehemu : IPW60R060C7XKSA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 600V 35A TO247
Mfululizo : CoolMOS™ C7
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 35A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 60 mOhm @ 15.9A, 10V
Vgs (th) (Max) @ Id : 4V @ 800µA
Malango ya Lango (Qg) (Max) @ Vgs : 68nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2850pF @ 400V
Makala ya FET : -
Kuondoa Nguvu (Max) : 162W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : PG-TO247-3
Kifurushi / Kesi : TO-247-3

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