ZXMN10A11GTA Bei (USD) [257918pcs Hisa]
- 1 pcs$0.14341
- 1,000 pcs$0.12877
- Nambari ya Sehemu:
- ZXMN10A11GTA
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET N-CH 100V 1.7A SOT223.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Moduli, Viwango - Zener - Arrays, Transistors - FET, MOSFETs - Moja, Viwango - Rectifiers - Moja, Moduli za Dereva za Nguvu and Transistors - Bipolar (BJT) - RF ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated ZXMN10A11GTA electronic components. ZXMN10A11GTA can be shipped within 24 hours after order. If you have any demands for ZXMN10A11GTA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN10A11GTA Sifa za Bidhaa
Nambari ya Sehemu :
ZXMN10A11GTA
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET N-CH 100V 1.7A SOT223
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
1.7A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
6V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
350 mOhm @ 2.6A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
5.4nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
274pF @ 50V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
2W (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
SOT-223
Kifurushi / Kesi :
TO-261-4, TO-261AA
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